Abstract: The gate-all-around nanosheet (NS) field effect transistors (FETs) are hailed as the most promising candidate for scaling the CMOS technology beyond the 5-nm technology node owing to their ...

Abstract: The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room ...