Abstract: As DRAM device dimension approaches 10nm scale and below in buried cell array transistors (BCAT), it is indispensable to adopt innovative cell structures and/or new materials for the next ...

Abstract: In this work, we present a variation-tolerant and energy-efficient charge-domain Ferroelectric FET (FeFET) based Compute-in-Memory (CiM) array design that is compatible with both binary and ...